SCHOTTKY BARRIERS AND EXTREMELY SHALLOW P-N-JUNCTIONS FORMED BY ANTIMONY RECOIL IMPLANTATION INTO SILICON

Antimony is an n-type dopant in silicon sometimes used in place of phosphorus and arsenic. We studied the properties of Schottky barriers and shallow p-n junctions formed on silicon by recoil implantation. Our main purpose was to study the properties of layers prepared using this technique and to examine device characteristics. It was observed that very shallow and yet highly doped layers could be formed and the basic properties of the antimony-doped layers were similar to those of layers made by direct implantation. As reported, the annealing temperature plays an important role in determining the antimony activities. When argon was used as the primary ion, Schottky diodes were formed at low annealing temperature. For p-type substrates, shallow p-n junctions were formed if the annealing was at 1000 degree C. The junction depth was about 300 A. Sharp breakdowns could be observed at voltages above 40 v.