MACROSCOPIC MECHANISM OF GROUP-V INTERDIFFUSION IN UNDOPED INGAAS/INP QUANTUM-WELLS GROWN BY MOVPE

被引：24

作者：

FUJII, T

SUGAWARA, M

YAMAZAKI, S

NAKAJIMA, K

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90384-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied group V interdiffusion in undoped InGaAs/InP quantum wells using photoluminescence measurements. After thermal annealing, the photoluminescence energy shifted to a higher energy than the as-grown sample in a manner inversely proportional to the quantum well width and proportional to the annealing time. Analyzing these results using microscopic diffusion theory, we concluded that group V species interdiffuse easily inside both the InP and the InGaAs layers, but interdiffuse with difficulty through InGaAs/InP hetero-interfaces. The interdiffusion rate was determined at the InGaAs/InP hetero-interfaces. © 1990.

引用

页码：348 / 352

页数：5

共 6 条

[1]

FREMING RM, 1980, J APPL PHYS, V51, P357

[2]

KAMEI H, 1990, I PHYS C SER, V106

[3] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].