EFFECTS OF CONTACT RESISTANCE AND DOPANT CONCENTRATION IN METAL - SEMICONDUCTOR THERMOELECTRIC COOLERS

被引：5

作者：

CORTES, CM ^{[1
]}

HUNSPERGER, RG ^{[1
]}

机构：

[1] UNIV DELAWARE,CTR ELECT ENGN,NEWARK,DE 19711

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 03期

关键词：

D O I：

10.1109/T-ED.1980.19893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：521 / 525

页数：5

共 27 条

[1]

ALIEV S, 1965, PHYS REV A, V138, P1270

[2] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J].

AMITH, A ;

KUDMAN, I ;

STEIGMEIER, EF .

PHYSICAL REVIEW, 1965, 138 (4A) :1270-+

[3]

ASAI S, 1973, 5TH P C SOL STAT DEV, P442

[4]

BACHEM K, 1973, 5TH P C SOL STAT DEV, P222

[5]

BARRIE R, 1954, PHYSICA, V2, P1087

[6]

CADOFF IB, 1960, THERMOELECTRIC MATER

[7] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[8] SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE [J].

EDWARDS, WD ;

TORRENS, AB ;

HARTMAN, WA .

SOLID-STATE ELECTRONICS, 1972, 15 (04) :387-&

[9]

EMELIANENKO OV, 1958, SOV PHYS-TECH PHYS, V3, P1094

[10]

EMELYANEKO OV, 1973, SOV PHYS SEMICOND+, V7, P667

← 1 2 3 →