SCANNING-TUNNELING-MICROSCOPY ON CONCAVE-SHAPED SI(100) SUBSTRATES

被引:24
作者
HANBUCKEN, M
ROTTGER, B
NEDDERMEYER, H
机构
[1] RUHR UNIV BOCHUM, INST PHYS EXPTL, D-44780 BOCHUM, GERMANY
[2] UNIV HALLE WITTENBERG, FACHBEREICH PHYS, D-06099 HALLE, GERMANY
[3] UNIV AIX MARSEILLE 3, CNRS, CRMC2, F-13288 MARSEILLE, FRANCE
关键词
SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE STRUCTURE;
D O I
10.1016/0039-6028(95)00130-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface structure, step- and terrace-width distribution of mechano-chemically prepared, concave-shaped Si(100) substrates, have been determined by scanning tunneling microscopy (STM). The as-prepared surfaces present a continuous range of local polar miscut angles Theta = 0 degrees-12 degrees and the full range of azimuthal directions. Under UHV treatment the surface breaks up into stepped surfaces with 2 X 1 and 1 X 2 reconstructed terraces. Depending on the local miscut angle Theta, three topographically different regions can be distinguished. A double-domain structure with single-layer steps is observed for Theta around 1 degrees. In [001]-like directions scaly arrangements of small terraces with both reconstructions were found. In [011]-like directions and for Theta exceeding 6 degrees, this phase is transformed into a single-domain structure where terraces are connected by double-layer steps. For intermediate Theta, a mixture of SL and DL steps was observed confirming a gradual and not abrupt transition between these phases. Well ordered high-index faces like (911) and (711) were observed for Theta exceeding 9 degrees.
引用
收藏
页码:1028 / 1032
页数:5
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