CATHODOLUMINESCENCE MICROCHARACTERIZATION OF THE DEFECT STRUCTURE OF QUARTZ

被引:285
作者
KALCEFF, MAS
PHILLIPS, MR
机构
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 05期
关键词
D O I
10.1103/PhysRevB.52.3122
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cathodoluminescence (CL) spectroscopy has been used to investigate the irradiation-sensitive defect structure of ultrapure synthetic quartz at 295 and 80 K. CL emissions are identified with particular defect centers. Insight into the processes of defect formation and subsequent electromigration resulting from the trapped-charge-induced electric field following irradiation by a stationary continuous electron beam are presented. The CL emissions are associated with either a nonbridging oxygen hole center (NBOHC) or trapped-electron Si-3(-) center (1.91 eV); NBOHC with OH precursor (1.95 eV); the radiative recombination of the self-trapped exciton (STE) in irradiation-induced amorphous SiO2 outgrowths (2.28 eV); an extrinsic process (2.46 eV); the radiative recombination of the STE associated with the E'(1) center in a-SiO2 (2.72 eV); an additional component at 80 K due to the radiative recombination of the STE associated with the E'(2) center (2.69 eV); an intrinsic process (2.95 eV); and the charge-compensated substitutional aluminum center (3.12 eV).
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页码:3122 / 3134
页数:13
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