NITROGEN IMPLANTATION IN GAAS1-XPX .1. PHOTOLUMINESCENCE PROPERTIES

被引：17

作者：

WOLFORD, DJ

ANDERSON, RE

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.324008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2442 / 2452

页数：11

共 43 条

[1] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J].

ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :1936-&

[2] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE [J].

ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04) :1136-&

[3]

ANDERSON RE, 1977, J APPL PHYS, V48, pR30

[4] BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N) [J].

CAMPBELL, JC ;

HOLONYAK, N ;

CRAFORD, MG ;

KEUNE, DL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4543-4553

[5] LUMINESCENCE PROPERTIES OF BE-IMPLANTED GAAS1-XPX (X APPROXIMATELY-EQUAL-TO 0.38) [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3003-3009

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[7] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF LUMINESCENCE, 1975, 10 (05) :313-322

[8]

COLEMAN JJ, 1975, J APPL PHYS, V46, P4835, DOI 10.1063/1.321513

[9] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

CRAFORD, MG ;

SHAW, RW ;

HERZOG, AH ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&

[10]

CRAFORD MG, 1976, OPTICAL PROPERTIES S, P187

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