GAAS-ALXGA1-XAS STRIP-BURIED-HETEROSTRUCTURE LASERS WITH LATERAL-EVANESCENT-FIELD DISTRIBUTED FEEDBACK

被引：22

作者：

TSANG, WT

LOGAN, RA

JOHNSON, LF

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaAs-AlxGa1-xAs strip-buried-heterostructure laser with distributed feedback provided through lateral-evanescent-field-grating interaction is demonstrated. The diode is shown to operate stably in single transverse (fundamental) and longitudinal modes up to about 3×I th over a temperature range 0-36°C under pulsed operation. The light-current characteristics of these lasers exhibit the characteristic linearity of conventional strip-buried heterostructure lasers.

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收藏

页码：752 / 755

页数：4

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