CHARACTERIZATION OF INDIVIDUAL DEFECTS IN MOSFETS

被引：4

作者：

KARMANN, A

SCHULZ, M

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90467-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：500 / 507

页数：8

共 9 条

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[2]

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[3] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS [J].

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RALLS, KS .

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[4] DEEP LEVEL TRANSIENT SPECTROSCOPY ON SINGLE, ISOLATED INTERFACE TRAPS IN FIELD-EFFECT TRANSISTORS [J].

KARWATH, A ;

SCHULZ, M .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :634-636

[5]

KARWATH A, 1989, PHYSICS CHEM SIO2 SI

[6]

KIRTON MJ, IN PRESS SEMICOND SC

[7] INTERFACE STATES AT THE SIO2-SI INTERFACE [J].

SCHULZ, M .

SURFACE SCIENCE, 1983, 132 (1-3) :422-455

[8]

UREN MJ, 1985, APPL PHYS LETT, V48, P1270

[9]

Werner C., 1980, Insulating Films on Semiconductors, 1979, P124

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