RELATION BETWEEN DELAMINATION AND TEMPERATURE CYCLING INDUCED FAILURES IN PLASTIC PACKAGED DEVICES

被引:12
作者
VANDOORSELAER, K
DEZEEUW, K
机构
[1] Corporate Reliability Centre, Philips Research Laboratories, 5600 JA, Eindhoven
来源
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1990年 / 13卷 / 04期
关键词
Chip Testing - Electrical Failures - IC Encapsulation - Plastic Packaged Devices - Temperature Cycling - Thermomechanical Stress;
D O I
10.1109/33.62533
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The occurrence of electrical failures in temperature cycling tests (TCT's) is studied by means of test chips. The observed failures are all caused by top metal deformation, leading to electrical “opens.” Investigation of the test chips using scanning acoustic tomography (SCAT) demonstrates that the failures are introduced by delamination at the plastic-die interface. A similar correlation is observed between hazardous metal shifting and delamination on 1-Mb SRAM's. Moreover, delamination at the plastic-die interface is found to give rise to a strong degradation of the wire bond quality. These observations can be explained by the increased freedom of the plastic to move with respect to the die surface in case of delamination, as well as by the concentration of shear stresses on a small area. The overall conclusion from these experiments is that adhesion plastic-die is the key factor to be considered in TCT's. © 1990 IEEE
引用
收藏
页码:879 / 882
页数:4
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