RESHARPENING EFFECT OF ALAS AND FABRICATION OF QUANTUM-WIRES ON V-GROOVED SUBSTRATES BY MOLECULAR-BEAM EPITAXY

The resharpening effect of AlAs grown on V-grooved substrates by MBE was first observed. The surface diffusions in GaAs/AlAs and InGaAs/AlAs heterostructures were also studied by high-resolution scanning electron microscope (SEM). With the measurement of PL at 77 K and the observation of high-resolution SEM, it was found that multiple GaAs/AlAs quantum-wires with a size of about 140-160 angstrom X 400-600 angstrom at the bottom of the V-grooves were formed. From the results, a new way of fabricating GaAs/AlAs and InGaAs/AlAs multiple quantum-wires at the bottom of V-grooves by MBE was proposed.