GE-DIMER RELAXATION ON SI(100)

被引：21

作者：

JIN, JM ^{[1
]}

LEWIS, LJ ^{[1
]}

机构：

[1] UNIV MONTREAL,RECH PHYS & TECHNOL COUCHES MINCES GRP,MONTREAL H3C 3J7,PQ,CANADA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.49.2201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We employ ab initio total-energy-minimization techniques to study the relaxation of Ge dimers on Si(100). We find that the dimers adopt an asymmetric configuration, in agreement with recent experimental results [E. Fontes et al., Phys. Rev, Lett. 70, 2790 (1993)]. The average dimer height displacement and tilting angle are found to be 0.79 Angstrom and +19 degrees, respectively. Our calculations predict that the (2 x 2) and c(4 x 4) reconstructed structures have the same energy, and suggest that either one of these two could be the ground-state structure.

引用

页码：2201 / 2204

页数：4

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