PSEUDOPOTENTIAL THEORY OF SHALLOW-DONOR GROUND-STATES

被引：18

作者：

SCHECHTER, D ^{[1
]}

机构：

[1] CALIF STATE UNIV, DEPT PHYS ASTRON, LONG BEACH, CA 90840 USA

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.8.652

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：652 / 659

页数：8

共 25 条

[1]

AGGARWAL RL, 1965, PHYS REV, V140, P1246

[2] ATOMIC SHIELDING PARAMETERS [J].

BURNS, G .

JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (05) :1521-&

[3] CONFIGURATION MIXING OF SUBSIDIARY MINIMA - CORRECTIONS TO GROUND-STATE WAVE FUNCTION FOR DONOR IN SILICON [J].

CASTNER, TG .

PHYSICAL REVIEW B, 1970, 2 (12) :4911-&

[4] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[5] ANALYTIC INDEPENDENT-PARTICLE MODEL FOR ATOMS [J].

GREEN, AES ;

SELLIN, DL ;

ZACHOR, AS .

PHYSICAL REVIEW, 1969, 184 (01) :1-&

[6] SHALLOW DONOR ELECTRONS IN SILICON .I. HYPERFINE INTERACTIONS FROM ENDOR MEASUREMENTS [J].

HALE, EB ;

MIEHER, RL .

PHYSICAL REVIEW, 1969, 184 (03) :739-&

[7]

Herman F., 1963, ATOMIC STRUCTURE CAL

[8] ANISOTROPIC PHONON SCATTERING OF ELECTRONS IN GERMANIUM AND SILICON [J].

ITO, R ;

KAWAMURA, H ;

FUKAI, M .

PHYSICS LETTERS, 1964, 13 (01) :26-27

[9] GROUND STATES OF SHALLOW DONORS IN SILICON AND GERMANIUM [J].

JAROS, M .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (10) :1162-&

[10] THEORY OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 98 (04) :915-922

← 1 2 3 →