RECOMBINATION RADIATION SPECTRA IN ZNSIP2 CRYSTALS

被引：18

作者：

ALEKPEROVA, EE

VALOV, YA

GORYUNOVA, NA

RYVKIN, SM

SHPENKOV, GP

机构：

[1] Physico-Technical Institute, Academy of Sciences of the Ussr

[2] Physical Institute, Academy of Sciences of the Azerbaidzhan SSR

来源：

PHYSICA STATUS SOLIDI | 1969年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssb.19690320106

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The recombination radiation spectra of ZnSiP2 single crystals produced by different methods and doped with different impurities have been measured. The recombination radiation was excited by a high‐energy electron beam. The recombination radiation spectra of ZnSiP2 appeared to be similar to that of the wide forbidden band A3B5 phosphides. The recombination takes place at levels located in the forbidden band of this semiconductor. The investigation of the recombination radiation spectra permits us to judge of luminescent properties of ZnSiP2 crystals produced by different techniques and of their energetic spectrum. In some cases it gives a possibility to some extent to characterize the peculiarities of methods of production of this substance. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：49 / +

页数：1