GAAS-A1AS LAYERED FILMS

被引：54

作者：

GOSSARD, AC

机构：

[1] Bell Laboratories, Murray Hill

来源：

THIN SOLID FILMS | 1979年 / 57卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90393-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of molecular beam epitaxy to form ordered layered crystals of GaAs and AlAs by alternate-monolayer epitaxial deposition is reviewed. The structures were examined by electron and X-ray diffraction. The relation of the optical properties to the structure is reviewed and new phonon modes associated with the structure are described. The results of alternate-monolayer deposition of other semiconductors are reported. © 1979.

引用

页码：3 / 13

页数：11

共 24 条

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[9] DERNIER PD, 1977, B AM PHYS SOC, V22, P293
[10] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
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WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

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