THE EFFECT OF 2ND SUBBAND OCCUPATION ON THE THERMOPOWER OF A HIGH MOBILITY GAAS-AL0.33GA0.67AS HETEROJUNCTION

被引：14

作者：

FLETCHER, R

HARRIS, JJ

FOXON, CT

机构：

[1] Dept. of Phys., Queen's Univ., Kingston, Ont.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 01期

关键词：

D O I：

10.1088/0268-1242/6/1/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By the use of persistent photoconductivity and magnetic depopulation we have investigated the effect on the thermopower S of sweeping the Fermi energy E(F) through the bottom of the second electric subband in a 2D electron gas. The data were taken in the He-4 temperature range where phonon drag is expected to dominate. For a given electron density, the absolute magnitude of S increases when E(F) moves into the second subband. At high magnetic fields and low temperatures a strong negative peak appears in S when E(F) coincides with the bottom of the second subband; this peak is of opposite sign to that which has been predicted to occur in the diffusion thermopower.

引用

页码：54 / 58

页数：5

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