DEFORMATION POTENTIALS AT THE VALENCE-BAND MAXIMUM IN SEMICONDUCTORS

被引：35

作者：

BREY, L ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.36.2638

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2638 / 2644

页数：7

共 31 条

[1] LINEAR METHODS IN BAND THEORY
ANDERSEN, OK
[J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083
[2] EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY
ANDERSEN, OK
JEPSEN, O
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (27) : 2571 - 2574
[3] [Anonymous], ELECTRONIC STRUCTURE
[4] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM
BACHELET, GB
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1985, 31 (02) : 879 - 887
[5] Bir GL., 1974, SYMMETRY STRAIN INDU
[6] DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS
BLACHA, A
PRESTING, H
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1984, 126 (01): : 11 - 36
[7] SCALING OF THE HAMILTONIAN AND MOMENTUM IN SEMICONDUCTORS
BREY, L
TEJEDOR, C
VERGES, JA
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6840 - 6845
[8] CANALI C, 1978, 1978 P INT C PHYS SE, P327
[9] CARDONA M, 1982, LANDOLTBORNSTEIN N A, V17
[10] Cardona M, 1982, LIGHT SCATTERING SOL