DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS

[1] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[4] AMORPHOUS SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453

[5] COTTON FA, 1972, ADV INORG CHEM, P113

[6] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[7] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[8] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[9] KNIGHTS JC, 1977, 7TH P INT C AM LIQ S, P433

[10] KNIGHTS JC, UNPUBLISHED

[1] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[4] AMORPHOUS SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453

[5] COTTON FA, 1972, ADV INORG CHEM, P113

[6] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[7] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[8] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[9] KNIGHTS JC, 1977, 7TH P INT C AM LIQ S, P433

[10] KNIGHTS JC, UNPUBLISHED