ELECTRONIC-STRUCTURES OF THE SINGLE-DOMAIN SI(001)2X1 AND 2X8 SURFACES

被引：15

作者：

ENTA, Y ^{[1
]}

SUZUKI, S ^{[1
]}

KONO, S ^{[1
]}

SAKAMOTO, T ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1990年 / 59卷 / 02期

关键词：

electronic structures; Si(001); single domain; solid surfaces; ultraviolet photoelectron spectroscopy;

D O I：

10.1143/JPSJ.59.657

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Wide-terrace single-domain Si(001)2×1 and 2×8 surfaces have been obtained on well-oriented Si(001) wafers. Angle-resolved ultraviolet photoelectron spectra have been measured for the two surfaces at room temperature. For the 2×1 surface, two surface state bands appear that are not expected for the usual asymmetric dimer model. We infer that the c(4×2) and/or p(2×2) structures coexist with the 2×1 periodicity. For the 2×8 surface, its electronic structures are very different from the 2x1 ones. This implies that a significant difference exists between the 2×1 and 2×8 surfaces. © 1990, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

引用

页码：657 / 661

页数：5

共 24 条

[1] ORDERED-DEFECT MODEL FOR SI(001)-(2X8)
ARUGA, T
MURATA, Y
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5654 - 5657
[2] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS
BRINGANS, RD
UHRBERG, RIG
OLMSTEAD, MA
BACHRACH, RZ
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450
[3] DIFFRACTION OF HE ATOMS AT A SI(100) SURFACE
CARDILLO, MJ
BECKER, GE
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (17) : 1148 - 1151
[4] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47
[5] ELECTRONIC-STRUCTURE OF THE SINGLE-DOMAIN SI(001) 2 X 1-K SURFACE
ENTA, Y
SUZUKI, S
KONO, S
SAKAMOTO, T
[J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5524 - 5526
[6] ANGLE-RESOLVED PHOTOEMISSION FROM SI(100) - DIRECT VERSUS INDIRECT TRANSITIONS
GOLDMANN, A
KOKE, P
MONCH, W
WOLFGARTEN, G
POLLMANN, J
[J]. SURFACE SCIENCE, 1986, 169 (2-3) : 438 - 450
[7] STRUCTURAL STUDIES OF ADSORPTION OF CS AND O2 ON SI(100)
GUNDRY, PM
HOLTOM, R
LEVERETT, V
[J]. SURFACE SCIENCE, 1974, 43 (02) : 647 - 652
[8] SCANNING TUNNELING MICROSCOPY OF SI(001)
HAMERS, RJ
TROMP, RM
DEMUTH, JE
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5343 - 5357
[9] PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES
HANSSON, GV
UHRBERG, RIG
[J]. SURFACE SCIENCE REPORTS, 1988, 9 (5-6) : 197 - 292
[10] PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100)
HIMPSEL, FJ
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1297 - 1299

← 1 2 3 →