STRAINED INGAAS QUANTUM-WELL LASERS WITH SMALL-DIVERGENCE ANGLES FOR HIGH-POWER PUMP MODULES

被引：5

作者：

TEMMYO, J ^{[1
]}

SHIMIZU, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 24期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS; OPTICAL PUMPING; GALLIUM INDIUM ARSENIDE;

D O I：

10.1049/el:19941403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial stuctures were designed for high-power strained InGaAs/AlGaAs quantum well lasers with low vertical-divergence emitting angles. The vertical divergence angles achieved were down to similar to 20 degrees. High power output 1.02 mu m pump modules with well-designed strained quantum well lasers have been developed for a 1.31 mu m band Pr+-doped fiber amplifier. A maximum optical fibre output of 157mW was obtained.

引用

页码：2046 / 2047

页数：2

共 6 条

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[4]

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[5]

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[6]

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