RAMAN-SCATTERING DEPTH PROFILE OF THE STRUCTURE OF ION-IMPLANTED GAAS

被引：80

作者：

HOLTZ, M

ZALLEN, R

BRAFMAN, O

MATTESON, S

机构：

[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT PHYS,BLACKSBURG,VA 24061

[2] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.37.4609

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：4609 / 4617

页数：9

相关论文

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