ASSESSMENT OF THE SUITABILITY OF RF SPUTTERED AMORPHOUS HYDROGENATED SI AS A POTENTIAL SOLAR-CELL MATERIAL

被引：7

作者：

ANDERSON, DA

MODDEL, G

PAUL, W

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 01期

关键词：

D O I：

10.1007/BF02655220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：141 / 152

页数：12

共 15 条

[1] IMPORTANCE OF ARGON PRESSURE IN THE PREPARATION OF RF-SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS [J].

ANDERSON, DA ;

MODDEL, G ;

PAESLER, MA ;

PAUL, W .

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[2]

ANDERSON DA, 1977, 7TH P INT C AM LIQ S, P334

[3] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[4] AMORPHOUS SILICON SOLAR-CELLS [J].

CARLSON, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :449-453

[5] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1978, 18 (08) :4288-4300

[6] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1979, 20 (02) :716-728

[7] ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].

MOORE, AR .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :762-764

[8] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].

MOUSTAKAS, TD ;

ANDERSON, DA ;

PAUL, W .

SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158

[9]

OGUZ S, 1978, B AM PHYS SOC, V23, P247

[10]

PAESLER MA, UNPUBLISHED

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