THE PARAMETERS OF PARTIALLY DEGENERATE SEMICONDUCTORS

[1] BLAKEMORE JS, 1952, IN PRESS COMMUNICATI

[2] THE ELECTRIC CONDUCTIVITY OF SIMPLE SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (361): : 75 - 76

[3] THE PARAMETERS OF SIMPLE EXCESS SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (377): : 476 - 480

[4] McDougall J., 1938, PHILOS T R SOC A, V237, P67, DOI [10.1098/rsta.1938.0004, DOI 10.1098/RSTA.1938.0004]

[5] THE ELECTRICAL CONDUCTIVITY OF GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1949, 62 (353): : 284 - 292

[6] Shifrin K, 1944, J PHYS-USSR, V8, P242

[1] BLAKEMORE JS, 1952, IN PRESS COMMUNICATI

[2] THE ELECTRIC CONDUCTIVITY OF SIMPLE SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (361): : 75 - 76

[3] THE PARAMETERS OF SIMPLE EXCESS SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (377): : 476 - 480

[4] McDougall J., 1938, PHILOS T R SOC A, V237, P67, DOI [10.1098/rsta.1938.0004, DOI 10.1098/RSTA.1938.0004]

[5] THE ELECTRICAL CONDUCTIVITY OF GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1949, 62 (353): : 284 - 292

[6] Shifrin K, 1944, J PHYS-USSR, V8, P242