EPITAXIAL RELATIONS BETWEEN INSITU SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS AND BATIO3/MGAL2O4/SI SUBSTRATES

被引：18

作者：

HWANG, DM ^{[1
]}

RAMESH, R ^{[1
]}

CHEN, CY ^{[1
]}

WU, XD ^{[1
]}

INAM, A ^{[1
]}

HEGDE, MS ^{[1
]}

WILKENS, B ^{[1
]}

CHANG, CC ^{[1
]}

NAZAR, L ^{[1
]}

VENKATESAN, T ^{[1
]}

MIURA, S ^{[1
]}

MATSUBARA, S ^{[1
]}

MIYASAKA, Y ^{[1
]}

SHOHATA, N ^{[1
]}

机构：

[1] NEC CORP LTD,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ superconducting YBa2Cu3O7-x films with Tc0 up to 87 K and Jc, 77 K up to 6×10 4 A/cm2 were prepared on Si substrates with MgAl 2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7-x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O 7-x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.

引用

页码：1772 / 1776

页数：5

共 17 条

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