THERMOELECTRIC PROPERTIES OF IMPURITY DOPED PBTE

被引:29
作者
BORISOVA, LD
机构
[1] Faculty of Physics, University of Sofia
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 53卷 / 01期
关键词
D O I
10.1002/pssa.2210530157
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K19 / K22
页数:4
相关论文
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HAUSNER HH, 1965, P INT C POWDER METAL, P141
[3]  
HEIKES RR, 1961, THERMOELECTRICITY SC, P407
[4]  
HENDERSON CM, 1973, THERMOELECTRIC MATER, P143
[5]  
KOVALCHIK TL, 1956, SOV PHYS-TECH PHYS, V1, P2337
[6]  
PHILIPS LS, 1969, Patent No. 1157261
[7]  
ROSI ED, 1968, SOLID STATE ELECTRON, V11, P843
[8]   EFFECT OF PARTIAL SUBSTITUTION OF LEAD BY GALLIUM, INDIUM, AND THALLIUM ON THERMOELECTRIC PROPERTIES OF PBTE [J].
RUSTAMOV, PG ;
ABILOV, CI ;
ALIDZHANOV, MA .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02) :K103-+
[9]  
Strauss A. J., 1973, Journal of Electronic Materials, V2, P553, DOI 10.1007/BF02655875