CRYSTALLIZATION AND PROPERTIES OF InSb FILMS GROWN FROM A NONSTOICHIOMETRIC LIQUID

被引：16

作者：

Wieder, H. H. ^{[1
]}

机构：

[1] USN, Ordnance Lab, Corona, CA USA

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 07期

关键词：

D O I：

10.1016/0038-1098(65)90181-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A melting and crystallization process is described for converting a vacuum deposited InSb film containing excess Sb into a stoichiometric, highly oriented, single-phase, InSb dendritic film. The room temperature electron mobility, mu(e), or such films is in the range of 3 x 10(4) to 4 x 10(4) cm(2)/(V-sec).

引用

页码：159 / 160

页数：2