ELECTRIC PROPERTIES OF UNIPOLAR GAAS STRUCTURES WITH ULTRATHIN TRIANGULAR BARRIERS

被引：9

作者：

GOSSARD, AC

KAZARINOV, RF

LURYI, S

WIEGMANN, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：832 / 833

页数：2

共 11 条

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[2]

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[3] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J].

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CHO, AY ;

GARBINSKI, PA ;

BETHEA, CG ;

LEVINE, BF .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :340-342

[4] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].

KAZARINOV, RF ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812

[5]

KAZARINOV RF, UNPUB

[6]

Landau L. D., 1977, QUANTUM MECHANICS NO

[7]

LURYI S, SOLID STATE ELECTRON

[8]

LURYI S, 1981, 39TH P ANN DEV RES C

[9]

MALIK RJ, 1981, 39TH P ANN DEV RES C

[10]

MALIK RJ, 1980, ELECTRON LETT, V16, P837

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