U-BAND MMIC HBT DRO

被引：14

作者：

CHEN, S

TADAYON, S

HO, T

PANDE, K

RICE, P

ADAIR, J

GHAHREMANI, M

机构：

[1] COMSAT Lab, Clarksburg

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 02期

关键词：

D O I：

10.1109/75.267714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than -132 dBC/HZ phase noise at 5 MHz offset from the carrier. To our knowledge, this is the highest frequency oscillator ever reported using HBT devices and MMIC technology.

引用

页码：50 / 52

页数：3