EVALUATION OF A POSITIVE TONE CHEMICALLY AMPLIFIED DEEP UV RESIST FOR E-BEAM APPLICATIONS

被引：10

作者：

ZANDBERGEN, P

DIJKSTRA, HJ

机构：

[1] Philips Research Laboratories, 5656 AA Eindhoven

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

Chemical reactions - Electron beam lithography - Imaging techniques - Optical resolving power - Process control - Radiation effects - Sensitivity analysis - Thermal effects - Ultraviolet radiation;

D O I：

10.1016/0167-9317(94)90160-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemically amplified positive tone deep UV resist SUCCESS DP2503.ST2 of BASF was evaluated for E-beam applicability. Process optimisation and tests have been focussed on imaging capabilities and delay time effects. While for some other chemically amplified positive tone resists the interval time between exposure and post exposure bake shows influence on resist performance, for SUCCESS.ST2 resist only very limited influence on linewidths and profiles is observed. After process optimization, a well controlled E-beam resist process has been obtained, with a sensitivity of 17 mu C/cm(2) at 50 keV for line and space patterns. 100 nm holes in 0.3 mu m resist illustrate the high resolution capability of SUCCESS.ST2 resist.

引用

页码：299 / 302

页数：4