LOW-TEMPERATURE INTERFACE REACTIONS IN LAYERED AU/SB FILMS - IN-SITU INVESTIGATION OF THE FORMATION OF AN AMORPHOUS PHASE

被引:17
作者
BOYEN, HG
COSSYFAVRE, A
OELHAFEN, P
SIBER, A
ZIEMANN, P
LAUINGER, C
MOSER, T
HAUSSLER, P
BAUMANN, F
机构
[1] UNIV KONSTANZ,FAK PHYS,D-78434 CONSTANCE,GERMANY
[2] UNIV KARLSRUHE,INST PHYS,D-76128 KARLSRUHE,GERMANY
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 03期
关键词
D O I
10.1103/PhysRevB.51.1791
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photoelectron-spectroscopy methods combined with electrical-resistance measurements were employed to study the effects of intermixing at Au/Sb interfaces at low temperatures. For the purpose of characterizing the growth processes of the intermixed phase on a ML scale, Au/Sb bilayers (layer thicknesses DAu=0.5-75 ML and DSb=150 ML) were evaporated at 77 K and the different in situ techniques allowed a comparison to vapor-quenched amorphous AuxSb100-x alloys. For Au thicknesses between 0.5 and 0.9 ML, a change from a semiconducting to a metallic behavior of the samples has been detected, as indicated by the development of a steplike photoelectron intensity at the Fermi level. Evidence has been found that for Au coverages ≤ 6 ML chemical reactions at the Au/Sb interface occur, leading to the formation of a homogeneously intermixed amorphous layer with a maximum thickness of about 2.3 nm and Au concentrations as high as 80 at. %. This latter value corresponds to the limiting Au content where amorphous alloys can be prepared at low temperature (0 at. % ≤x≤ 80 at. %). For nominal coverages beyond 6 ML polycrystalline Au films were formed. Consequently, Au/Sb multilayers with sufficiently small modulation lengths, which were prepared at 130 K by ion-beam sputtering, were observed to grow as a homogeneous amorphous phase over a broad range of compositions, as evidenced by in situ resistance measurements and by comparing the obtained crystallization temperatures to those of vapor-quenched amorphous alloys. Variation of the deposition temperature Ts revealed that an amorphous interface layer is only formed for Ts≤ 220 K. This is consistent with the fact that for multilayers with large modulation lengths containing unreacted polycrystalline Au and Sb layers, long-range interdiffusion is found to set in at temperatures above 230 K. This interdiffusion, however, results in the formation of polycrystalline Au-Sb alloys. © 1995 The American Physical Society.
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页码:1791 / 1802
页数:12
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