TUNNELING EMITTER UNDOPED QUANTUM-WELL INFRARED PHOTODETECTOR

被引:35
作者
BANDARA, KMSV
LEVINE, BF
ASOM, MT
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.354115
中图分类号
O59 [应用物理学];
学科分类号
摘要
An extensive series of measurements and theoretical analysis are presented on an undoped single-quantum-well infrared photodetector. The well is filled by electron tunneling through the thin emitter barrier resulting in several novel characteristics compared with the usual directly well-doped detectors. These include a unity optical gain and a dramatic drop in the well carrier density (and responsivity) at high bias when the bound state in the well drops below the emitter conduction-band edge.
引用
收藏
页码:346 / 350
页数:5
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