LARGE RF-CONTROLLED VOLTAGE STEPS IN DC SQUIDS APPLICABLE TO VOLTAGE STANDARDS AND SOURCES

被引：15

作者：

Lee, G. S. ^{[1
]}

Ko, H. L. ^{[1
]}

Ruby, R. C. ^{[1
]}

Barfknecht, A. T. ^{[2
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94303 USA

[2] Conductus Inc, Sunnyvale, CA 94086 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current height of rf-induced voltage steps in non-hysteretic single Josephson junctions is usually a small fraction of the critical current. We demonstrate that when a resistively shunted dc SQUID is subjected to an rf magnetic flux, one obtains a voltage step with a large current height. In contrast to weak selection rules for single Josephson junctions, strong selection of the step harmonic number occurs in a shunted dc SQUID for appropriate choice of rf amplitude and dc flux offset, with odd harmonic numbers selected by half-integer flux quantum offsets and even harmonic numbers by integer flux quantum offsets. This pronounced effect has immediate implications for voltage standards and fast, high-precision digital-to-analog converters.

引用

页码：2740 / 2743

页数：4

共 7 条

[1] A SIMPLE AND ROBUST NIOBIUM JOSEPHSON JUNCTION INTEGRATED-CIRCUIT PROCESS [J].