Stoichiometric growth of polycrystalline C3N4 thin films

被引：33

作者：

Li, YA

Zhang, ZB

Xie, SS

Yang, GZ

机构：

[1] Institute of Physics, Chinese Academy of Sciences, Beijing

来源：

CHEMICAL PHYSICS LETTERS | 1995年 / 247卷 / 03期

关键词：

D O I：

10.1016/0009-2614(95)01209-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Polycrystalline carbon nitride films were synthesized using the rf diode sputtering technique. The carbon nitride films were evaluated with IR spectroscopy, X-ray diffraction and Auger electron spectroscopy. The more important findings are that polycrystalline C3N4 films could be deposited on single-crystal Si(111) wafers at ambient temperatures during deposition and the nitrogen-carbon concentration ratios chi = [N]/[C] attained the stoichiometric value 1.33 required for the C3N4 structure in the films.

引用

页码：253 / 256

页数：4

共 17 条

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