THERMAL-STABILITY OF ELECTROCONDUCTIVE TIN-REINFORCED SILICON OXYNITRIDE COMPOSITES

被引：4

作者：

LIN, W ^{[1
]}

YANG, JM ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90024

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1994年 / 13卷 / 01期

关键词：

D O I：

10.1016/0955-2219(94)90058-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The thermal stability and oxidation behavior of TiN-reinforced silicon oxynitride (Si2N2O) Composites with different sintering additives fabricated by in-situ reaction forming process was investigated at temperatures ranging from 950 to 1400-degrees-C in air. The oxide scale was characterized by X-ray diffraction, scanning electron microscopy and electron probe microanalysis. The influence of sintering additives on the oxidation kinetics and rate-controlling mechanisms was also investigated. The thermal stability of these TiN-reinforced Si2N2O composites was found to be dominated by the oxidation of TiN phase.

引用

页码：53 / 60

页数：8

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