VACUUM EPITAXIAL-GROWTH OF PB1-XSNXTE FILMS ON CLEAVED BAF2 SUBSTRATES

被引:7
作者
CHAN, WS [1 ]
机构
[1] CINCINNATI ELECTR CORP,2630 GLENDALE MILFORD RD,CINCINNATI,OH 45241
来源
INFRARED PHYSICS | 1974年 / 14卷 / 03期
关键词
D O I
10.1016/0020-0891(74)90020-7
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:177 / 181
页数:5
相关论文
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ZEMEL, JN .
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[3]   EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].
HOLLOWAY, H ;
LOGOTHETIS, EM ;
WILKES, E .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+
[4]  
MELNGAILIS I, 1970, SEMICONDUCT SEMIMET, V5, pCH4
[5]  
TAO TF, 1969, J VAC SCI TECHNOL, V6, P918
[6]  
VANDERPAUW LJ, 1959, PHILIPS TECHNICAL RE, V20, P958