A REVIEW OF THE BULK GROWTH OF HIGH BAND-GAP II-VI COMPOUNDS

被引:27
作者
FITZPATRICK, BJ
机构
[1] Philips Corp, Briarcliff Manor, NY,, USA, Philips Corp, Briarcliff Manor, NY, USA
关键词
CRYSTALS - Growing - SEMICONDUCTING CADMIUM COMPOUNDS - SEMICONDUCTING ZINC COMPOUNDS;
D O I
10.1016/0022-0248(90)90706-Q
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A wide variety of methods has been applied to the bulk growth of high band gap II-VI compounds. This is due in part to the differences between the compounds, but more importantly, to the great difficulty of achieving single crystal material of significant size. Melt, solution, and vapor methods have all yielded material useful for small-scale experimental studies; however, significant progress in skill needs to be made in growth techniques for future applications of II-VI compounds to become effective.
引用
收藏
页码:106 / 110
页数:5
相关论文
共 48 条
[1]   SOME PROPERTIES OF ZINC SULFIDE CRYSTALS GROWN FROM THE MELT [J].
ADDAMIANO, A ;
AVEN, M .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) :36-39
[2]  
Akhekyan A. M., 1985, Soviet Journal of Quantum Electronics, V15, P737, DOI 10.1070/QE1985v015n05ABEH007114
[3]  
ALLEN ET, 1912, AM J SCI, V34, P310
[4]  
Bell R. O., 1970, Physica Status Solidi A, V1, P375, DOI 10.1002/pssa.19700010303
[5]   CRYSTAL-GROWTH OF CD1-XZNXTE AND ITS USE AS A SUPERIOR SUBSTRATE FOR LPE GROWTH OF HG0.8CD0.2TE [J].
BELL, SL ;
SEN, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :112-115
[6]  
Bulakh B. M., 1970, Journal of Crystal Growth, V7, P196, DOI 10.1016/0022-0248(70)90009-6
[7]  
Cemic L., 1974, High Temperatures - High Pressures, V6, P203
[8]   ELECTRON-BEAM PUMPED II-VI-LASERS [J].
COLAK, S ;
FITZPATRICK, BJ ;
BHARGAVA, RN .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :504-511
[9]  
DEBSKA U, 1984, J CRYSTAL GROWTH, V70, P339
[10]   SEEDED GROWTH OF LARGE SINGLE-CRYSTALS OF CDS FROM VAPOR-PHASE [J].
DIERSSEN, GH ;
GABOR, T .
JOURNAL OF CRYSTAL GROWTH, 1978, 43 (05) :572-576