MOLECULAR-BEAM EPITAXY OF ZN(SE,TE) ALLOYS AND SUPERLATTICES

被引：18

作者：

TURCOSANDROFF, FS

NAHORY, RE

BRASIL, MJSP

MARTIN, RJ

BESERMAN, R

FARROW, LA

WORLOCK, JM

WEAVER, AL

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91077-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnSe1-xTe(x) ternary alloys have been grown over the entire range of composition by molecular beam epitaxy on GaAs or InP substrates. A good control of the composition is obtained by growing the ternary in Zn-rich conditions. The bandgap energy versus the composition shows a very large bowing with a minimum at room temperature of 2.05 eV and a Te concentration of 0.65. ZnSe/ZnTe superlattices have been grown and show a strong absorption at 1.8 eV supporting the hypothesis of a type II superlattice.

引用

页码：762 / 766

页数：5

共 16 条

[1] SYNTHESIS + TRANSPORT PROPERTIES OF ZNSE-ZNTE MIXED CRYSTALS IN N- + P-TYPE FORM ( CARRIER CONCENTRATION + MOBILITY AS FUNCTION OF TEMPERATURE MINIMUM RESISTANCE - 1OMEGA-CM E ) [J].