SINGLE-ELECTRON TUNNELING OBSERVED AT ROOM-TEMPERATURE BY SCANNING-TUNNELING MICROSCOPY

被引：112

作者：

SCHONENBERGER, C

VANHOUTEN, H

DONKERSLOOT, HC

机构：

[1] Philips Research Laboratories, Eindhoven, 5600

来源：

EUROPHYSICS LETTERS | 1992年 / 20卷 / 03期

关键词：

D O I：

10.1209/0295-5075/20/3/010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultrasmall (less-than-or-similar-to 5 nm in lateral diameter) double-barrier tunnel junctions have been realized using a scanning tunnelling microscope, and an optimized metal particle-oxide-metallic substrate system. Three electrical transport effects, all in good agreement with the semi-classical theory of single-electron tunnelling, have been found at room temperature: the Coulomb gap, the Coulomb staircase and zero-bias conductance oscillations as a function of tip-particle distance.

引用

页码：249 / 254

页数：6

共 17 条

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