LATTICE LOCATIONS AND ELECTRIC-FIELD GRADIENTS OF BORON IMPLANTED INTO VANADIUM

被引：5

作者：

ITTERMANN, B ^{[1
]}

BURKMANN, K ^{[1
]}

DIEHL, E ^{[1
]}

DIPPEL, R ^{[1
]}

FISCHER, B ^{[1
]}

FRANK, HP ^{[1
]}

JAGER, E ^{[1
]}

SEELINGER, W ^{[1
]}

SULZER, G ^{[1
]}

ACKERMANN, H ^{[1
]}

STOCKMANN, HJ ^{[1
]}

机构：

[1] UNIV MARBURG, WISSENSCHAFTL ZENTRUM MAT WISSENSCH, W-3550 MARBURG, GERMANY

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1993年 / 91卷 / 01期

关键词：

D O I：

10.1007/BF01316702

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polarised beta emitting B-12 nuclei were recoil implanted into single crystalline vanadium at T = 305 K. Beta radiation detected nuclear magnetic resonance measurements showed that two implantation sites occur simultaneously which were identified as the substitutional site and an interstitial site with axial symmetry. Extensive cross-relaxation measurements were performed on B-12 in both lattice positions. By this means the interstitial site could be identified as the octahedral one. The impurity induced electric field gradients at nearest and at next nearest V-51 neighbours about B-12 could be determined for both implantation sites.

引用

页码：7 / 19

页数：13

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