THEORY OF THE MOBILITY OF ELECTRONS IN A SEMICONDUCTING-SURFACE INVERSION LAYER

被引：12

作者：

LAI, WY

TING, CS

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.24.7206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7206 / 7209

页数：4

共 10 条

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[2] TEMPERATURE-DEPENDENCE OF DYNAMIC CONDUCTIVITY OF ELECTRONS IN SURFACE INVERSION LAYER OF SEMICONDUCTING SILICON [J].

GANGULY, AK ;

TING, CS .

PHYSICAL REVIEW B, 1977, 16 (08) :3541-3545

[3] HOMOGENEOUS DYNAMICAL CONDUCTIVITY OF SIMPLE METALS [J].

GOTZE, W ;

WOLFLE, P .

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[4] THE BOLTZMANN EQUATION IN THE THEORY OF ELECTRICAL CONDUCTION IN METALS [J].

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[5] EXACT FORMULAS FOR ELECTRICAL-RESISTIVITY [J].

HUBERMAN, M ;

CHESTER, GV .

ADVANCES IN PHYSICS, 1975, 24 (04) :489-514

[6]

Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[8] CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS [J].

STERN, F .

PHYSICAL REVIEW LETTERS, 1980, 44 (22) :1469-1472

[9] INFRARED CYCLOTRON-RESONANCE IN SEMICONDUCTING SURFACE INVERSION LAYERS [J].

TING, CS ;

YING, SC ;

QUINN, JJ .

PHYSICAL REVIEW LETTERS, 1976, 37 (04) :215-218

[10]

Ziman J. M., 1960, ELECT PHONONS

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