NEAR-AMBIENT-TEMPERATURE BIPOLAR-TRANSISTOR IN CADMIUM MERCURY TELLURIDE

被引：3

作者：

ASHLEY, T ^{[1
]}

ELLIOTT, CT ^{[1
]}

WHITE, AM ^{[1
]}

CRIMES, GJ ^{[1
]}

HARKER, AT ^{[1
]}

机构：

[1] MULLARD LTD,SOUTHAMPTON S09 7BH,HANTS,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19870887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1280 / 1281

页数：2

共 5 条

[1] BIPOLAR-TRANSISTOR ACTION IN CADMIUM MERCURY TELLURIDE
ASHLEY, T
CRIMES, G
ELLIOT, CT
HARKER, AT
[J]. ELECTRONICS LETTERS, 1986, 22 (11) : 611 - 613
[2] BAKER IM, 1983, IEE C PUBL, V228, P12
[3] TYPE CONVERSION IN CDXHG1-XTE BY ION-BEAM TREATMENT
BLACKMAN, MV
CHARLTON, DE
JENNER, MD
PURDY, DR
WOTHERSPOON, JTM
ELLIOTT, CT
WHITE, AM
[J]. ELECTRONICS LETTERS, 1987, 23 (19) : 978 - 979
[4] THEORY OF LATERAL-COLLECTION PHOTO-DIODES
HOLLOWAY, H
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4264 - 4269
[5] Wotherspoon J.T.M., 1981, UK Patent, Patent No. [GB 2095898, 2095898]