NOISE IN SEMICONDUCTOR-LASER AMPLIFIERS WITH QUANTUM BOX STRUCTURE

被引：16

作者：

KOMORI, K

ARAI, S

SUEMATSU, Y

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 01期

关键词：

D O I：

10.1109/68.68041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present low-noise properties of a quantum box traveling-wave semiconductor laser amplifier (QB-TW-SLA) for the first time. The gain and population-inversion parameter of a quantum box structure are precisely expressed using density matrix theory. Due to sharp gain characteristics as well as small population inversion parameter, dominant two-beat noises were found to be significantly reduced in the quantum box semiconductor laser amplifier, even in solitary device without a narrow bandpass filter, and the noise figure can be reduced to 3.5 dB.

引用

页码：39 / 41

页数：3

共 12 条

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