SPECTROSCOPY OF EXCITED-STATES IN IN0.53GA0.47AS-INP SINGLE QUANTUM WELLS GROWN BY CHEMICAL-BEAM EPITAXY - COMMENT

被引：29

作者：

CARDONA, M

CHRISTENSEN, NE

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.37.1011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1011 / 1012

页数：2

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共 3 条

[1] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS
CARDONA, M
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194
[2] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS BY ADMITTANCE SPECTROSCOPY - INP/GA0.47IN0.53AS
LANG, DV
PANISH, MB
CAPASSO, F
ALLAM, J
HAMM, RA
SERGENT, AM
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 736 - 738
[3] SPECTROSCOPY OF EXCITED-STATES IN IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL-BEAM EPITAXY
SAUER, R
HARRIS, TD
TSANG, WT
[J]. PHYSICAL REVIEW B, 1986, 34 (12): : 9023 - 9026