QUALITY OF MOLECULAR-BEAM-EPITAXY-GROWN GAAS ON SI(100) STUDIED BY ELLIPSOMETRY

被引：8

作者：

ROSSOW, U

FIESELER, T

ZAHN, DRT

RICHTER, W

WOOLF, DA

WESTWOOD, DI

WILLIAMS, RH

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY

[2] UNIV COLL CARDIFF,COLL CARDIFF,DEPT PHYS,CARDIFF CF1 3TH,WALES

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

D O I：

10.1016/0921-5107(90)90074-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs has been grown by molecular beam epitaxy on Si(100) using different substrate preparations, different conditions for the growth of a buffer layer and different thickness of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function obtained through ellipsometric measurements. The results suggest a preference for certain substrate preparations and the condition for epitaxial growth of GaAs on Si(100). © 1990.

引用

页码：309 / 312

页数：4

共 9 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].