FREE-CARRIER RADIATION PEAK IN GAAS DUE TO VALENCE-BAND MAXIMA ARISING FROM TERMS LINEAR IN K

被引：5

作者：

GILLEO, MA

BAILEY, PT

机构：

[1] Monsanto Company, Saint Louis

来源：

PHYSICAL REVIEW | 1969年 / 187卷 / 03期

关键词：

D O I：

10.1103/PhysRev.187.1181

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new peak has been observed 0.4 meV above the direct band-to-band-transition radiation at 1.5202 eV in the 1.4a°K photoluminescence spectrum of high-purity epitaxial GaAs. This new peak is attributed to the recombination of free electrons of nonzero k with free holes in the linear-k valence-band maxima, which are estimated to be a3×105 cm-1 away from and a1×10-4 eV above the k=0 maximum. © 1969 The American Physical Society.

引用

页码：1181 / &

共 6 条

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PIDGEON, CR
GROVES, SH
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