SILICON FIELD-EFFECT TRANSISTOR BASED ON QUANTUM TUNNELING

This letter explores regulation of current flow within a silicon field-effect transistor by gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel. The goal here is to forestall short-channel effects which are expected to prevent further size reductions in conventional devices when linewidths reach approximately 1000 angstrom. Control of tunneling appears to be possible at minimum channel lengths L approximately 250 angstrom or less while simultaneously eliminating the need for large-area source and drain contacts, so that scaling of Si transistors could be significantly extended if this principle proves technically feasible.