GATE DRIVE CONSIDERATIONS FOR IGBT MODULES

被引：38

作者：

CHOKHAWALA, RS ^{[1
]}

CATT, J ^{[1
]}

PELLY, BR ^{[1
]}

机构：

[1] INT RECTIFIER CORP,EL SEGUNDO,CA 90245

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1995年 / 31卷 / 03期

关键词：

D O I：

10.1109/28.382122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The switching performance of an IGBT module depends upon the drive circuit characteristics and external de loop inductance. This paper discusses the influence of these parameters on switching losses, diode recovery, switching voltage transients, short circuit operation, and dv/df induced current, The paper is tutorial and identifies trends, It is intended as an aid to the circuit designer, to help him apply the IGBT module to best advantage.

引用

页码：603 / 611

页数：9