STRUCTURAL AND MAGNETORESISTANCE PROPERTIES OF CO/CU MULTILAYERS

被引：13

作者：

TOMLINSON, ME ^{[1
]}

POLLARD, RJ ^{[1
]}

LORD, DG ^{[1
]}

GRUNDY, PJ ^{[1
]}

CHUN, Z ^{[1
]}

机构：

[1] SW INST APPL MAGNET CHINA,SICHUAN 621000,PEOPLES R CHINA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1992年 / 28卷 / 05期

关键词：

D O I：

10.1109/20.179589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the structure and magnetoresistance of Co/Cu multilayers prepared by magnetron sputtering in a high vacuum deposition system. The results from the as-deposited multilayers show that the presence of an iron buffer layer between the glass substrate and the multilayer affects the structure of the multilayer and increases the magnetoresistance values obtained. Annealing of the multilayers also has a considerable effect on the structure and the magnetoresistance of the multilayer system.

引用

页码：2662 / 2664

页数：3

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