OPERATION OF STRAINED-LAYER (IN,GA)AS QUANTUM-WELL LASERS PREPARED ON (112)B GAAS SUBSTRATE

被引：9

作者：

SUN, D

TOWE, E

机构：

[1] Department of Electical Engineering, University of Virginia, Charlottesville

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 06期

关键词：

SEMICONDUCTOR LASERS; OPTICAL HARMONIC GENERATION;

D O I：

10.1049/el:19940328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operation of (In,Ga)As quantum well lasers prepared on [112]-oriented GaAs substrates is reported. Threshold current densities as low as 187 A/cm2 for a 1.57 mm-long device have been obtained under pulsed-mode operation. The demonstration of laser action in a heterostructure grown on the [112]-oriented substrate is important for the design of blue-green light emitters.

引用

页码：497 / 499

页数：3