2-STAGE INJECTION LOCKING OF HIGH-POWER SEMICONDUCTOR ARRAYS

被引：8

作者：

PANG, LY ^{[1
]}

KINTZER, ES ^{[1
]}

FUJIMOTO, JG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

OPTICS LETTERS | 1990年 / 15卷 / 13期

关键词：

D O I：

10.1364/OL.15.000728

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new multistage diode-array injection-locking technique is demonstrated. This approach permits higher power extraction or higher overall gain to be achieved than possible with single-stage designs. Using two antireflection-coated 40-stripe multiple-quantum-well diode arrays, we characterize the amplifier small-signal and saturated gain performance. More than 500 mW of power is achieved with single frequency and narrow linewidth in a nearly diffraction-limited far-field lobe. With small-signal inputs, an overall gain of 25 dB with 290-mW locked output is obtained. © 1990 Optical Society of America.

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页码：728 / 730

页数：3

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