ELECTRONIC CONDUCTION PROCESS IN 1T-TAS2

被引：31

作者：

HAMBOURGER, PD ^{[1
]}

DISALVO, FJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICA B & C | 1980年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0378-4363(80)90227-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：173 / 176

页数：4

共 13 条

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[6]

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[8] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J].

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[9] HALL-EFFECT OF 1T-TAS2 [J].

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[10] ANOMALOUSLY LARGE NEGATIVE MAGNETORESISTANCE OF 1T-TAS2 AT ULTRA LOW-TEMPERATURES [J].

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